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Rumah > Produk > IC Komponen Elektronik > 1N6630US/TR

1N6630US/TR

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Description: DIODE GEN PURP 900V 1.4A D-5B

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
4 µA @ 100 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 3 A
Package:
Tape & Reel (TR)
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
D-5B
Reverse Recovery Time (trr):
50 ns
Mfr:
Teknologi Microchip
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
SQ-MELF, E
Tegangan - DC Terbalik (Vr) (Maks):
900V
Arus - Rata-Rata Diperbaiki (Io):
1.4A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
4 µA @ 100 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 3 A
Package:
Tape & Reel (TR)
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
D-5B
Reverse Recovery Time (trr):
50 ns
Mfr:
Teknologi Microchip
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
SQ-MELF, E
Tegangan - DC Terbalik (Vr) (Maks):
900V
Arus - Rata-Rata Diperbaiki (Io):
1.4A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
1N6630US/TR
Dioda 900 V 1.4A Permukaan Gunung D-5B