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Rumah > Produk > IC Komponen Elektronik > JANTXV1N5417US/TR

JANTXV1N5417US/TR

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Description: DIODE GEN PURP 200V 3A D-5B

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Menyoroti:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
1 µA @ 200 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 9 A
Package:
Tape & Reel (TR)
Series:
Military, MIL-PRF-19500/411
Capacitance @ Vr, F:
-
Supplier Device Package:
D-5B
Reverse Recovery Time (trr):
150 ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
SQ-MELF, E
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
3A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
1 µA @ 200 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 9 A
Package:
Tape & Reel (TR)
Series:
Military, MIL-PRF-19500/411
Capacitance @ Vr, F:
-
Supplier Device Package:
D-5B
Reverse Recovery Time (trr):
150 ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
SQ-MELF, E
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
3A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
JANTXV1N5417US/TR
Dioda 200 V 3A Permukaan Gunung D-5B