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JAN1N5416US/TR

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Description: DIODE GEN PURP 100V 3A

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Menyoroti:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
1 µA @ 100 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 9 A
Package:
Tape & Reel (TR)
Series:
Military, MIL-PRF-19500/411
Capacitance @ Vr, F:
-
Supplier Device Package:
B, Axial
Reverse Recovery Time (trr):
150 ns
Mfr:
Teknologi Microchip
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Paket / Kasus:
B, Aksial
Tegangan - DC Terbalik (Vr) (Maks):
100 V
Current - Average Rectified (Io):
3A
Kecepatan:
Pemulihan Cepat =<500ns, > 200mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
1 µA @ 100 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 9 A
Package:
Tape & Reel (TR)
Series:
Military, MIL-PRF-19500/411
Capacitance @ Vr, F:
-
Supplier Device Package:
B, Axial
Reverse Recovery Time (trr):
150 ns
Mfr:
Teknologi Microchip
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Paket / Kasus:
B, Aksial
Tegangan - DC Terbalik (Vr) (Maks):
100 V
Current - Average Rectified (Io):
3A
Kecepatan:
Pemulihan Cepat =<500ns, > 200mA (Io)
JAN1N5416US/TR
Dioda 100 V 3A Melalui Lubang B, Aksial