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Rumah > Produk > IC Komponen Elektronik > MNS1N5806US/TR

MNS1N5806US/TR

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Description: DIODE GP REV 160V 1A A SQ-MELF

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Menyoroti:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
1 µA @ 150 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
875 mV @ 1 A
Package:
Tape & Reel (TR)
Series:
MIL-PRF-19500/477
Capacitance @ Vr, F:
25pF @ 10V, 1MHz
Supplier Device Package:
A, SQ-MELF
Reverse Recovery Time (trr):
25 ns
Mfr:
Microchip Technology
Technology:
Standard, Reverse Polarity
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
SQ-MELF, A
Voltage - DC Reverse (Vr) (Max):
160 V
Current - Average Rectified (Io):
1A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
1 µA @ 150 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
875 mV @ 1 A
Package:
Tape & Reel (TR)
Series:
MIL-PRF-19500/477
Capacitance @ Vr, F:
25pF @ 10V, 1MHz
Supplier Device Package:
A, SQ-MELF
Reverse Recovery Time (trr):
25 ns
Mfr:
Microchip Technology
Technology:
Standard, Reverse Polarity
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
SQ-MELF, A
Voltage - DC Reverse (Vr) (Max):
160 V
Current - Average Rectified (Io):
1A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
MNS1N5806US/TR
Dioda 160 V 1A Permukaan Mount A, SQ-MELF