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Rumah > Produk > IC Komponen Elektronik > 1N5621US/TR

1N5621US/TR

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Description: DIODE GEN PURP 800V 1A D-5A

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Menyoroti:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Status Produk:
Aktif
Current - Reverse Leakage @ Vr:
500 nA @ 800 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 3 A
Paket:
Tape & Reel (TR)
Series:
-
Capacitance @ Vr, F:
20pF @ 12V, 1MHz
Paket Perangkat Pemasok:
H-5A
Reverse Recovery Time (trr):
300 ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
SQ-MELF, A
Tegangan - DC Terbalik (Vr) (Maks):
800 V
Current - Average Rectified (Io):
1A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Status Produk:
Aktif
Current - Reverse Leakage @ Vr:
500 nA @ 800 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 3 A
Paket:
Tape & Reel (TR)
Series:
-
Capacitance @ Vr, F:
20pF @ 12V, 1MHz
Paket Perangkat Pemasok:
H-5A
Reverse Recovery Time (trr):
300 ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
SQ-MELF, A
Tegangan - DC Terbalik (Vr) (Maks):
800 V
Current - Average Rectified (Io):
1A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
1N5621US/TR
Dioda 800 V 1A Permukaan Gunung D-5A