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Rumah > Produk > IC Komponen Elektronik > SICRD101200

SICRD101200

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Syarat Pembayaran & Pengiriman

Description: DIODE SIL CARBIDE 1.2KV 10A DPAK

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Menyoroti:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Status Produk:
Aktif
Current - Reverse Leakage @ Vr:
100 µA @ 1200 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 10 A
Package:
Tape & Reel (TR)
Series:
-
Capacitance @ Vr, F:
640pF @ 0V, 1MHz
Supplier Device Package:
DPAK
Membalikkan Waktu Pemulihan (trr):
0 n
Mfr:
SMC Diode Solutions
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
10A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
SICRD101200
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Status Produk:
Aktif
Current - Reverse Leakage @ Vr:
100 µA @ 1200 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 10 A
Package:
Tape & Reel (TR)
Series:
-
Capacitance @ Vr, F:
640pF @ 0V, 1MHz
Supplier Device Package:
DPAK
Membalikkan Waktu Pemulihan (trr):
0 n
Mfr:
SMC Diode Solutions
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
10A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
SICRD101200
SICRD101200
Dioda 1200 V 10A Permukaan Gunung DPAK