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Rumah > Produk > IC Komponen Elektronik > GB01SLT12-252

GB01SLT12-252

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Description: DIODE SIL CARBIDE 1.2KV 1A TO252

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Menyoroti:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
2 µA @ 1200 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 1 A
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Series:
SiC Schottky MPS™
Capacitance @ Vr, F:
69pF @ 1V, 1MHz
Supplier Device Package:
TO-252
Reverse Recovery Time (trr):
0 ns
Mfr:
GeneSiC Semiconductor
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
1A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
GB01SLT12
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
2 µA @ 1200 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 1 A
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Series:
SiC Schottky MPS™
Capacitance @ Vr, F:
69pF @ 1V, 1MHz
Supplier Device Package:
TO-252
Reverse Recovery Time (trr):
0 ns
Mfr:
GeneSiC Semiconductor
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
1A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
GB01SLT12
GB01SLT12-252
Dioda 1200 V 1A Permukaan Gunung TO-252