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ShenZhen QingFengYuan Technology Co.,Ltd.
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G3S06504A

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Syarat Pembayaran & Pengiriman

Description: DIODE SIC 650V 11.5A TO220AC

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Menyoroti:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
50 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 4 A
Package:
Tape & Box (TB) Tray
Series:
-
Capacitance @ Vr, F:
181pF @ 0V, 1MHz
Supplier Device Package:
TO-220AC
Reverse Recovery Time (trr):
0 ns
Mfr:
Global Power Technology-GPT
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
11.5A
Speed:
No Recovery Time > 500mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
50 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 4 A
Package:
Tape & Box (TB) Tray
Series:
-
Capacitance @ Vr, F:
181pF @ 0V, 1MHz
Supplier Device Package:
TO-220AC
Reverse Recovery Time (trr):
0 ns
Mfr:
Global Power Technology-GPT
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
11.5A
Speed:
No Recovery Time > 500mA (Io)
G3S06504A
Dioda 650 V 11.5A Melalui Lubang TO-220AC