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Description: DIODE GEN PURP 100V 6A R-6
| Category: | Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes | Product Status: | Active | Current - Reverse Leakage @ Vr: | 10 µA @ 100 V | Mounting Type: | Through Hole | Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 6 A | Package: | Tape & Box (TB) | Series: | - | Capacitance @ Vr, F: | 100pF @ 4V, 1MHz | Paket Perangkat Pemasok: | R-6 | Reverse Recovery Time (trr): | 150 ns | Mfr: | Comchip Technology | Technology: | Standard | Operating Temperature - Junction: | -55°C ~ 150°C | Paket / Kasus: | R-6, Aksial | Voltage - DC Reverse (Vr) (Max): | 100 V | Current - Average Rectified (Io): | 6A | Speed: | Fast Recovery =< 500ns, > 200mA (Io) | 
| Category: | Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes | 
| Product Status: | Active | 
| Current - Reverse Leakage @ Vr: | 10 µA @ 100 V | 
| Mounting Type: | Through Hole | 
| Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 6 A | 
| Package: | Tape & Box (TB) | 
| Series: | - | 
| Capacitance @ Vr, F: | 100pF @ 4V, 1MHz | 
| Paket Perangkat Pemasok: | R-6 | 
| Reverse Recovery Time (trr): | 150 ns | 
| Mfr: | Comchip Technology | 
| Technology: | Standard | 
| Operating Temperature - Junction: | -55°C ~ 150°C | 
| Paket / Kasus: | R-6, Aksial | 
| Voltage - DC Reverse (Vr) (Max): | 100 V | 
| Current - Average Rectified (Io): | 6A | 
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |