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Deskripsi: Dioda Sil Carbide 650V 6A VSON-4
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Arus - Kebocoran Terbalik @ Vr: |
110 µA @ 650 V |
Tipe pemasangan: |
Permukaan Gunung |
Voltage - Forward (Vf) (Max) @ If: |
1.7 V @ 6 A |
Package: |
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel® |
Series: |
CoolSiC™+ |
Kapasitansi @ Vr, F: |
190pf @ 1v, 1MHz |
Supplier Device Package: |
PG-VSON-4 |
Reverse Recovery Time (trr): |
0 ns |
Mfr: |
Teknologi Infineon |
teknologi: |
SiC (Silicon Carbide) Schottky |
Operating Temperature - Junction: |
-55°C ~ 150°C |
Package / Case: |
4-PowerTSFN |
Voltage - DC Reverse (Vr) (Max): |
650 V |
Current - Average Rectified (Io): |
6A |
Speed: |
No Recovery Time > 500mA (Io) |
Nomor produk dasar: |
IDL06G65 |
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Arus - Kebocoran Terbalik @ Vr: |
110 µA @ 650 V |
Tipe pemasangan: |
Permukaan Gunung |
Voltage - Forward (Vf) (Max) @ If: |
1.7 V @ 6 A |
Package: |
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel® |
Series: |
CoolSiC™+ |
Kapasitansi @ Vr, F: |
190pf @ 1v, 1MHz |
Supplier Device Package: |
PG-VSON-4 |
Reverse Recovery Time (trr): |
0 ns |
Mfr: |
Teknologi Infineon |
teknologi: |
SiC (Silicon Carbide) Schottky |
Operating Temperature - Junction: |
-55°C ~ 150°C |
Package / Case: |
4-PowerTSFN |
Voltage - DC Reverse (Vr) (Max): |
650 V |
Current - Average Rectified (Io): |
6A |
Speed: |
No Recovery Time > 500mA (Io) |
Nomor produk dasar: |
IDL06G65 |