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WNSC2D12650TJ

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Description: DIODE SIL CARBIDE 650V 12A 5DFN

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Menyoroti:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
60 µA @ 650 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 12 A
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Series:
-
Capacitance @ Vr, F:
380pF @ 1V, 1MHz
Supplier Device Package:
5-DFN (8x8)
Reverse Recovery Time (trr):
0 ns
Mfr:
WeEn Semiconductors
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
175°C
Package / Case:
4-VSFN Exposed Pad
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
12A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
WNSC2
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
60 µA @ 650 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 12 A
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Series:
-
Capacitance @ Vr, F:
380pF @ 1V, 1MHz
Supplier Device Package:
5-DFN (8x8)
Reverse Recovery Time (trr):
0 ns
Mfr:
WeEn Semiconductors
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
175°C
Package / Case:
4-VSFN Exposed Pad
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
12A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
WNSC2
WNSC2D12650TJ
Dioda 650 V 12A Permukaan Gunung 5-DFN (8x8)