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Deskripsi: Dioda Sil Carb 650V 6A TO220-2-1
| Kategori: | Produk Semikonduktor Diskrit Dioda Penyearah Dioda Tunggal | Status Produk: | Aktif | Current - Reverse Leakage @ Vr: | 110 µA @ 650 V | Tipe pemasangan: | Melalui Lubang | Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 6 A | Package: | Tube | Series: | CoolSiC™+ | Kapasitansi @ Vr, F: | 190pf @ 1v, 1MHz | Supplier Device Package: | PG-TO220-2-1 | Reverse Recovery Time (trr): | 0 ns | Mfr: | Infineon Technologies | teknologi: | SiC (Silicon Carbide) Schottky | Operating Temperature - Junction: | -55°C ~ 175°C | Package / Case: | TO-220-2 | Tegangan - DC Terbalik (Vr) (Maks): | 650 V | Arus - Rata-Rata Diperbaiki (Io): | 6A | Speed: | No Recovery Time > 500mA (Io) | Nomor produk dasar: | IDH06G65 | 
| Kategori: | Produk Semikonduktor Diskrit Dioda Penyearah Dioda Tunggal | 
| Status Produk: | Aktif | 
| Current - Reverse Leakage @ Vr: | 110 µA @ 650 V | 
| Tipe pemasangan: | Melalui Lubang | 
| Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 6 A | 
| Package: | Tube | 
| Series: | CoolSiC™+ | 
| Kapasitansi @ Vr, F: | 190pf @ 1v, 1MHz | 
| Supplier Device Package: | PG-TO220-2-1 | 
| Reverse Recovery Time (trr): | 0 ns | 
| Mfr: | Infineon Technologies | 
| teknologi: | SiC (Silicon Carbide) Schottky | 
| Operating Temperature - Junction: | -55°C ~ 175°C | 
| Package / Case: | TO-220-2 | 
| Tegangan - DC Terbalik (Vr) (Maks): | 650 V | 
| Arus - Rata-Rata Diperbaiki (Io): | 6A | 
| Speed: | No Recovery Time > 500mA (Io) | 
| Nomor produk dasar: | IDH06G65 |