Rincian produk
Syarat Pembayaran & Pengiriman
Deskripsi: Dioda Sil Carb 650V 6A TO220-2-1
Kategori: |
Produk Semikonduktor Diskrit Dioda Penyearah Dioda Tunggal |
Status Produk: |
Aktif |
Current - Reverse Leakage @ Vr: |
110 µA @ 650 V |
Tipe pemasangan: |
Melalui Lubang |
Voltage - Forward (Vf) (Max) @ If: |
1.7 V @ 6 A |
Package: |
Tube |
Series: |
CoolSiC™+ |
Kapasitansi @ Vr, F: |
190pf @ 1v, 1MHz |
Supplier Device Package: |
PG-TO220-2-1 |
Reverse Recovery Time (trr): |
0 ns |
Mfr: |
Infineon Technologies |
teknologi: |
SiC (Silicon Carbide) Schottky |
Operating Temperature - Junction: |
-55°C ~ 175°C |
Package / Case: |
TO-220-2 |
Tegangan - DC Terbalik (Vr) (Maks): |
650 V |
Arus - Rata-Rata Diperbaiki (Io): |
6A |
Speed: |
No Recovery Time > 500mA (Io) |
Nomor produk dasar: |
IDH06G65 |
Kategori: |
Produk Semikonduktor Diskrit Dioda Penyearah Dioda Tunggal |
Status Produk: |
Aktif |
Current - Reverse Leakage @ Vr: |
110 µA @ 650 V |
Tipe pemasangan: |
Melalui Lubang |
Voltage - Forward (Vf) (Max) @ If: |
1.7 V @ 6 A |
Package: |
Tube |
Series: |
CoolSiC™+ |
Kapasitansi @ Vr, F: |
190pf @ 1v, 1MHz |
Supplier Device Package: |
PG-TO220-2-1 |
Reverse Recovery Time (trr): |
0 ns |
Mfr: |
Infineon Technologies |
teknologi: |
SiC (Silicon Carbide) Schottky |
Operating Temperature - Junction: |
-55°C ~ 175°C |
Package / Case: |
TO-220-2 |
Tegangan - DC Terbalik (Vr) (Maks): |
650 V |
Arus - Rata-Rata Diperbaiki (Io): |
6A |
Speed: |
No Recovery Time > 500mA (Io) |
Nomor produk dasar: |
IDH06G65 |