logo
ShenZhen QingFengYuan Technology Co.,Ltd.
Produk
Produk

IDT08S60C

Rincian produk

Syarat Pembayaran & Pengiriman

Description: DIODE SIL CARB 600V 8A TO220-2

Dapatkan Harga Terbaik
Menyoroti:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 µA @ 600 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 8 A
Package:
Bulk
Series:
-
Capacitance @ Vr, F:
310pF @ 1V, 1MHz
Supplier Device Package:
PG-TO220-2
Reverse Recovery Time (trr):
0 ns
Mfr:
Infineon Technologies
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
8A
Speed:
No Recovery Time > 500mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 µA @ 600 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 8 A
Package:
Bulk
Series:
-
Capacitance @ Vr, F:
310pF @ 1V, 1MHz
Supplier Device Package:
PG-TO220-2
Reverse Recovery Time (trr):
0 ns
Mfr:
Infineon Technologies
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
8A
Speed:
No Recovery Time > 500mA (Io)
IDT08S60C
Dioda 600 V 8A Melalui Lubang PG-TO220-2