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TRS3E65F,S1Q

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Description: DIODE SIL CARB 650V 3A TO220-2L

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Menyoroti:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
20 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 3 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
12pF @ 650V, 1MHz
Supplier Device Package:
TO-220-2L
Reverse Recovery Time (trr):
0 ns
Mfr:
Toshiba Semiconductor and Storage
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
175°C (Max)
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
3A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
TRS3E65
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
20 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 3 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
12pF @ 650V, 1MHz
Supplier Device Package:
TO-220-2L
Reverse Recovery Time (trr):
0 ns
Mfr:
Toshiba Semiconductor and Storage
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
175°C (Max)
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
3A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
TRS3E65
TRS3E65F,S1Q
Dioda 650 V 3A melalui lubang TO-220-2L