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Description: DIODE SIL CARB 650V 3A TO220-2L
| Category: | Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes | Product Status: | Active | Current - Reverse Leakage @ Vr: | 20 µA @ 650 V | Mounting Type: | Through Hole | Voltage - Forward (Vf) (Max) @ If: | 1.6 V @ 3 A | Package: | Tube | Series: | - | Capacitance @ Vr, F: | 12pF @ 650V, 1MHz | Supplier Device Package: | TO-220-2L | Reverse Recovery Time (trr): | 0 ns | Mfr: | Toshiba Semiconductor and Storage | Technology: | SiC (Silicon Carbide) Schottky | Operating Temperature - Junction: | 175°C (Max) | Package / Case: | TO-220-2 | Voltage - DC Reverse (Vr) (Max): | 650 V | Current - Average Rectified (Io): | 3A | Speed: | No Recovery Time > 500mA (Io) | Base Product Number: | TRS3E65 | 
| Category: | Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes | 
| Product Status: | Active | 
| Current - Reverse Leakage @ Vr: | 20 µA @ 650 V | 
| Mounting Type: | Through Hole | 
| Voltage - Forward (Vf) (Max) @ If: | 1.6 V @ 3 A | 
| Package: | Tube | 
| Series: | - | 
| Capacitance @ Vr, F: | 12pF @ 650V, 1MHz | 
| Supplier Device Package: | TO-220-2L | 
| Reverse Recovery Time (trr): | 0 ns | 
| Mfr: | Toshiba Semiconductor and Storage | 
| Technology: | SiC (Silicon Carbide) Schottky | 
| Operating Temperature - Junction: | 175°C (Max) | 
| Package / Case: | TO-220-2 | 
| Voltage - DC Reverse (Vr) (Max): | 650 V | 
| Current - Average Rectified (Io): | 3A | 
| Speed: | No Recovery Time > 500mA (Io) | 
| Base Product Number: | TRS3E65 |