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Description: DIODE GEN PURP 600V 200A 3 TOWER
| Category: | Discrete Semiconductor Products
Diodes
Rectifiers
Diode Arrays | Product Status: | Active | Current - Average Rectified (Io) (per Diode): | 200A | Operating Temperature - Junction: | -55°C ~ 150°C | Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 200 A | Package: | Bulk | Series: | - | Diode Configuration: | 1 Pair Common Anode | Supplier Device Package: | Three Tower | Mfr: | GeneSiC Semiconductor | Technology: | Standard | Package / Case: | Three Tower | Voltage - DC Reverse (Vr) (Max): | 600 V | Mounting Type: | Chassis Mount | Speed: | Standard Recovery >500ns, > 200mA (Io) | Base Product Number: | MURTA40060 | Current - Reverse Leakage @ Vr: | 25 µA @ 600 V | 
| Category: | Discrete Semiconductor Products
Diodes
Rectifiers
Diode Arrays | 
| Product Status: | Active | 
| Current - Average Rectified (Io) (per Diode): | 200A | 
| Operating Temperature - Junction: | -55°C ~ 150°C | 
| Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 200 A | 
| Package: | Bulk | 
| Series: | - | 
| Diode Configuration: | 1 Pair Common Anode | 
| Supplier Device Package: | Three Tower | 
| Mfr: | GeneSiC Semiconductor | 
| Technology: | Standard | 
| Package / Case: | Three Tower | 
| Voltage - DC Reverse (Vr) (Max): | 600 V | 
| Mounting Type: | Chassis Mount | 
| Speed: | Standard Recovery >500ns, > 200mA (Io) | 
| Base Product Number: | MURTA40060 | 
| Current - Reverse Leakage @ Vr: | 25 µA @ 600 V |