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SE10FJ-M3/I

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Description: DIODE GEN PURP 600V 1A DO219AB

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Menyoroti:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
5 µA @ 600 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.05 V @ 1 A
Paket:
Tape & Reel (TR)
Series:
-
Capacitance @ Vr, F:
7.5pF @ 4V, 1MHz
Supplier Device Package:
DO-219AB (SMF)
Reverse Recovery Time (trr):
780 ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
DO-219AB
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
1A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Base Product Number:
SE10
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
5 µA @ 600 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.05 V @ 1 A
Paket:
Tape & Reel (TR)
Series:
-
Capacitance @ Vr, F:
7.5pF @ 4V, 1MHz
Supplier Device Package:
DO-219AB (SMF)
Reverse Recovery Time (trr):
780 ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
DO-219AB
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
1A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Base Product Number:
SE10
SE10FJ-M3/I
Dioda 600 V 1A Surface Mount DO-219AB (SMF)